Prime Si+SiO2 Wafer (dry), Size: 6”, Orientation: (100), Boron Doped, Resistivity: 1 - 10 (ohm.cm), 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm

(No reviews yet) Write a Review
SKU:
NG08SW0319
Contact us on sales@nanografi.com

Description

1 piece/95 
5 pieces/354                         
25 pieces/1578                         
 
Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (dry)

Size: 6”, Orientation: (100), Boron Doped, 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm 

Technical Properties: 

Quality

Prime

Materials

Si + SiO2 (dry)

Size (inch)

6”

Orientation

(100)

Coating

200 nm

Thickness (μm)

675 ± 15

Doping

Boron

Resistivity (ohm.cm)

1-10

Polished

Double  Side

Silicon dioxide wafer – also referred as thermal oxide wafer- is produced at elevated temperatures.

Thermal oxide is normally grown in a horizontal tube furnace, at temperature range from 900°C ~ 1200°C.

Thermal oxide is a kind of "grown" oxide layer , compared to CVD deposited oxide layer , it has a higher uniformity, and higher dielectric strength , it is an excellent dielectric layer as an insulator.

In most silicon-based devices, thermal oxide layer plays an important role to pacify the silicon surface to act as doping barriers and as surface dielectrics.

It allows a very good thickness uniformity and purity.

Therefore, this is the preferred way to produce high quality thin silicon oxide layers.

Thicker oxide layers are typically produced by wet oxidation where the growth rate is significantly increased.

View AllClose