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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm
1 piece/69 €5 pieces/310 € 25 pieces/1450 € Please contact us for...NG08SW0707Qty in Cart: 0Price:Subtotal: -
Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm
1 piece/64 €5 pieces/280 € 25 pieces/1300 € Please...NG08SW0706Qty in Cart: 0Price:Subtotal: -
Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 70 nm
1 piece/62 €5 pieces/270 € 25 pieces/1225 € Please contact us for quotes on...NG08SW0705Qty in Cart: 0Price:Subtotal: -
Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm
1 piece/92 €5 pieces/420 € 25 pieces/1975 € Please contact us...NG08SW0704Qty in Cart: 0Price:Subtotal: -
Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm
1 piece/55 €5 pieces/245 € 25 pieces/1125 € Please contact us...NG08SW0703Qty in Cart: 0Price:Subtotal: