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Prime Si + SiO2 (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 100 nm

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Prime Si + SiO2 (dry), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 200 nm

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Prime Si + SiO2 (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 0.001 - 0.01 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 500 nm

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Prime Si + SiO2 (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 - 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1500 nm

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Prime Si + SiO2 (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 - 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 300 nm

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Prime Si + SiO2 (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 - 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 400 nm

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Prime Si + SiO2 (wet), Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 2-Side Polished, Thickness: 500 ± 15 μm, Coating 300 nm

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Prime Si + SiO2 (wet), Size: 4”, Orientation: (111), Phosphor Doped, Resistivity: 1 - 10 (ohm.cm), 1-Side Polished, Thickness: 525 ± 25 μm, Coating 1000 nm

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