Prime Si+SiO2 Wafer (dry), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm

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SKU:
NG08SW0307
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  • Prime Si+SiO2 Wafer (dry), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm- NG08SW0307
  • Prime Si+SiO2 Wafer (dry), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm
€46.00
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1 piece/46
5 pieces/190                        
25 pieces/850                         
 
Please contact us for quotes on larger quantities !!! 

Prime Si+SiO2 Wafer (dry)

Size: 3”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm 

Technical Properties: 

Quality

Prime

Materials

Si + SiO2 (dry)

Size (inch)

3”

Orientation

(100)

Coating

100 nm

Thickness (μm)

380 ± 25

Doping

Boron

Resistivity (ohm.cm)

1-10

Polished

One Side

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