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Tantalum Oxide Sputtering Targets

Tantalum oxide, also known as tantalum(V) oxide, is the inorganic compound with the formula Ta2O5. It is a white solid that is insoluble in all solvents but is attacked by strong bases and hydrofluoric acid. Ta2O5 is an inert material with a high refractive index and low absorption which makes it useful for coatings. It is also extensively used in the production of capacitors, due to its high dielectric constant.

Tantalum oxide films are of interest for applications in high temperature resistance, anti-reflection coatings for solar cells, optical waveguide, oxygen sensors, and capacitor dielectric materials. In recent years they have received increasing attention as an alternative dielectric to replace thin SiO, films for storage capacitors in very large-scale-integrated memory cells and as gate insulators in metal-oxide-semiconductor devices.

Tantalum oxide films can be formed by at least five different methods: (1) thermal oxidation of sputtered tantalum films; (2) chemical vapor deposition (CVD) using a TaCl, (3) anodization of Ta metal films (4) magnetron sputter deposition from a Ta,O2 target ; (5) reactive sputtering of a pure Ta target using O2-Ar gas .

Also tantalum oxide can be used for high dielectric constant materials because of its high dielectric constant, high refractive index and chemical and thermal stability with the promise of compatibility in the microelectronics processing. 

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