Silicon (Si (P-type)) Sputtering Targets

Silicon (Si (P-type)) Sputtering Targets

Silicon is a widely used semiconductor that has dark grey with a bluish tinge. Regarding its specification, its atomic weight is 28.0855 and the melting point of 1440 °C. The thermal conductivity is 150 W/m.k and theoretical density is 2.32 (g/cc). Silicon Sputtering Targets are extensively used as it is a pure metal target. Its applications include mostly in the Electronic and Computer industry. It can be doped with arsenic Phosphorus or Boron depending on the usage. Silicon is a brittle metal which can be easily chipped. Silicon Sputtering targets are full of many advantages. There are many techniques to obtain doped Silicon film like plasma-enhanced chemical vapor deposition (CVD), hotwire CVD and magnetron sputtering. The most attractive method is Magnetron sputtering. When compared to undoped Silicon, it develops a thin film with higher carrier concentration and lower activation energy. Silicon Sputtering eliminates the toxic gas release and uses a lower temperature in the process. It is available in several shapes and sizes according to the requirements.

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