Prime Si+SiO2 Wafer (dry), Size: 2”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

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SKU:
NG08SW0303
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Description

1 piece/54
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Prime Si+SiO2 Wafer (dry)

Size: 2”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 279 ± 20 μm, Coating 100 nm

Technical Properties: 

Quality

Prime

Materials

Si + SiO2 (dry)

Size (inch)

2”

Orientation

(100)

Coating

100 nm

Thickness (μm)

279 ± 20

Doping

Boron

Resistivity (ohm.cm)

1-10      

Polished

One Side

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