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Prime FZ-Si Wafer, 4”,(100), Boron Doped, 2000 - 4000 (ohm.cm),1-Side Polished, 300 ± 10 μm

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Prime FZ-Si Wafer, 4”,(100), None Doped, 1000 - 10000 (ohm.cm),2-Side Polished, 500 ± 25 μm

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Prime FZ-Si Wafer, 4”,(100), Phosphor Doped, 3000 - 100000(ohm.cm),2-Side Polished, 200 ± 10 μm

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Prime FZ-Si Wafer, 4”,(100), Phosphor Doped, 5000 - 500000(ohm.cm),2-Side Polished, 300 ± 10 μm

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Prime FZ-Si Wafer, 4”,(111), None Doped, 10000 - 100000 (ohm.cm),2-Side Polished, 300 ± 20 μm

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