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4"

Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 2000 - 4000 (ohm.cm), 1-Side Polished, Thickness: 300 ± 10 μm

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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 3000 - 100000 (ohm.cm), 2-Side Polished, Thickness: 200 ± 10 μm

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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), None Doped, Resistivity: 1000 - 10000 (ohm.cm), 2-Side Polished, Thickness: 500 ± 25 μm

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Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Phosphor Doped, Resistivity: 5000 - 500000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 10 μm

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Prime FZ-Si Wafer, Size: 4”, Orientation: (111), None Doped, Resistivity: 10000 - 100000 (ohm.cm), 2-Side Polished, Thickness: 300 ± 20 μm

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