Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm

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SKU:
NG08SW0703
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  • Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm
  • Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm
€55.00
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1 piece/55 €
5 pieces/245 €                      
25 pieces/1125 €                       

Please contact us for quotes on larger quantities !!!
 

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 380± 15 μm, Coating 150 nm 

Technical Properties:

Quality

Prime

Materials

Si+Si3N4

Size (inch)

4”

Orientation

(100)

Coating

150 nm

Thickness (μm)

381± 25

Doping

Boron

Resistivity (ohm.cm)

1-10      

Polished

Double Side

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