Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

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SKU:
NG08SW0706
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Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm

Technical Properties: 

Quality

Prime

Materials

Si+Si3N4

Size (inch)

4”

Orientation

(100)

Coating

150 nm

Thickness (μm)

525± 25

Doping

Boron

Resistivity (ohm.cm)

1-10      

Polished

Double Side

Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability.

It is commonly used for hard masks, as a dielectric material, or as a passivation layer.

Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. 

Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance.

Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

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