Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 525± 25 μm, Coating 150 nm

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NG08SW0706
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Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Boron Doped, Thickness: 525± 25 μm, Coating 150 nm

Technical Properties: 

Quality

Prime

Materials

Si+Si3N4

Size (inch)

4”

Orientation

(100)

Coating

150 nm

Thickness (μm)

525± 25

Doping

Boron

Resistivity (ohm.cm)

1-10      

Polished

Double Side

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