Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

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SKU:
NG08SW0707
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Description

1 piece/69
5 pieces/310                         
25 pieces/1450                        

Please contact us for quotes on larger quantities !!!
 

Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm

Technical Properties: 

Quality

Prime

Materials

Si+Si3N4

Size (inch)

4”

Orientation

(100)

Coating

450 nm

Thickness (μm)

525± 25

Doping

Arsenic

Resistivity (ohm.cm)

0,001-0,005       

Polished

One Side

 

 

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