Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm

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SKU:
NG08SW0707
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Prime Si+Si3N4 Wafer

Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm

Technical Properties: 

Quality

Prime

Materials

Si+Si3N4

Size (inch)

4”

Orientation

(100)

Coating

450 nm

Thickness (μm)

525± 25

Doping

Arsenic

Resistivity (ohm.cm)

0,001-0,005       

Polished

One Side

 

Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability.

It is commonly used for hard masks, as a dielectric material, or as a passivation layer.

Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance. 

Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance.

Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.

 

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