Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm

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NG08SW0702
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  • Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm
  • Prime Si+Si3N4 Wafer, Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 381± 25 μm, Coating 300 nm
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25 pieces/1350                        

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Prime Si+Si3N4 Wafer

Size: 3”, Orientation: (100), Boron Doped, Thickness: 381± 25 μm, Coating 300 nm

Technical Properties: 

Quality

Prime

Materials

Si+Si3N4

Size (inch)

3”

Orientation

(100)

Coating

300 nm

Thickness (μm)

381± 25

Doping

Boron

Resistivity (ohm.cm)

1-10      

Polished

Double Side

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