Monolayer Graphene on SiO2/Si Substrate, Size: 4"

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Monolayer Graphene on SiO2/Si Substrate Size: 4", Grain Size: 6-10 μm

Technical Properties of Graphene Film


Transparency > 95 %
Coverage > 93%
Thickness (theoretical) 0.340 nm
Sheet Resistance 500-530 Ohms/sq
Grain Size 6-10 μm

Technical Properties of SiO2/Si Substrate


Size (inch) 4''
Dry Oxide Thickness 300 nm
Type Phosphor doped / N type
Orientation <100>
Resistivity 0.001 - 0.01
Thickness 525 +/- 20 μm
Front surface One Side Polished

SEM Image of Monolayer Graphene


Raman Image Of Monolayer Graphene 


Method of Preparation  Graphene on Si/SiO2 Substrate was prepared by the following steps:

1) Single layer graphene grown on copper foil

2) Deposit PMMA and curing process

3) Remove Cu by etching process

4) Wash PMMA/Graphene in DI water

5) Redeposit PMMA/Graphene onto Si substrate and curing process

6) Remove PMMA with aceton


Graphene research; Supercapacitors; Catalyst; Solar energy; Graphene optoelectronics, plasmonics and nanophotonics;
Graphene semiconductor chips; Conductive graphene film; Graphene computer memory; Biomaterials and Bioelectronics. 

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