Monolayer Graphene on SiO2/Si Substrate, Size: 2"

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SKU:
NG01CG0101
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Description

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Monolayer Graphene on SiO2/Si Substrate Size: 2"

Technical Properties of Graphene Film

Transparency

> 95 %

Coverage

> 93%

Thickness (theoretical)

0.340 nm

Sheet Resistance

500-530 Ohms/sq

Grain size

6-10 μm

Technical Properties of SiO2/Si Substrate

Size (inch)

2''

Dry Oxide Thickness

300 nm

Type

Phosphor doped/N type

Orientation

<100>

Resistivity

0.001 - 0.01

Thickness

525 +/- 20 μm

Front surface

One Side Polished

SEM Image of Monolayer Graphene

nanografi-cvd-graphene-monolayer-graphene-on-sio2-si-substrate-sem-image.jpgnanografi-cvd-graphene-monolayer-graphene-on-sio2-si-substrate-sem-image2.jpg 

Raman Spectrum Image Of Monolayer Graphene

                                                                                                                      

nanografi-cvd-graphene-monolayer-graphene-on-sio2-si-substrate-raman-image.jpg

Method of Preparation Graphene on Si/SiO2 Substrate was prepared by the following steps:

1) Singlelayer graphene grown on copper foil
2) Deposit PMMA and curing process
3) Remove Cu by etching process
4) Wash PMMA/Graphene in DI water
5) Redeposit PMMA/Graphene onto Si substrate and curing process
6) Remove PMMA with aceton

Applications

  • Graphene research 
  • Supercapacitors
  • Catalyst
  • Solar energy 
  • Graphene optoelectronics, plasmonics and nanophotonics
  • Graphene semiconductor chips
  • Conductive graphene film
  • Graphene computer memory
  • Biomaterials and Bioelectronics

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