Monolayer Graphene on SiO2/Si Substrate, Size: 2"

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1 piece/ 269 €   
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Monolayer Graphene on SiO2/Si Substrate

Size: 2" 

Technical Properties of Graphene Film:


Transparency > 95 %
Coverage: > 93%
Thickness (theoretical) 0.340 nm
Sheet Resistance: 500-530 Ohms/sq
Grain size 6-10 μm

Technical Properties of SiO2/Si Substrate:


Size (inch) 2''
Dry Oxide Thickness 300 nm
Type Phosphor doped/N type
Orientation <100>
Resistivity 0.001 - 0.01
Thickness 525 +/- 20 μm
Front surface One Side Polished


Graphene research; Supercapacitors; Catalyst; Solar energy; Graphene optoelectronics, plasmonics and nanophotonics; 
Graphene semiconductor chips; Conductive graphene film; Graphene computer memory; Biomaterials and Bioelectronics


SEM Image of Monolayer Graphene



Raman Image Of Monolayer Graphene  

Method of Preparation Graphene on Si/SiO2 Substrate was prepared by the following steps:

1) Singlelayer graphene grown on copper foil
2) Deposit PMMA and curing process
3) Remove Cu by etching process
4) Wash PMMA/Graphene in DI water
5) Redeposit PMMA/Graphene onto Si substrate and curing process
6) Remove PMMA with aceton


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