Indium Phosphide (InP) Wafers, Size: 3'', Thickness: 600± 25 μm, Orientation: 111 , Single Side Polished, EPI-Ready, Dopant: Iron (N Type)

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Description

Description

1 piece/822 €
5 pieces/3936 €

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Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600± 25 μm, Orientation: 111

Technical Properties:

Size (inch)	3”
Thickness (μm)	600± 25
Dopant	Iron (N type)
Polished	Single Side
Mobility	（1.5-3.5）E3
Orientation	111
EPD	≤5000
Growth method	VGF
OF Length	22±2
IF Length	11±1
Resistivity	1E7 Ohmcm

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
Indium phosphide (InP) has started to be developed at the beginning of 1980s.
Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct
bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP)
is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form.

Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors.

InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide.