Indium Phosphide (InP) Wafers, Size: 3'', Thickness: 600± 25 μm, Orientation: 111 , Single Side Polished, EPI-Ready, Dopant: Iron (N Type)

(No reviews yet) Write a Review
Contact us at:


1 piece/822 
5 pieces/3936                           

Please contact us for quotes on larger quantities !!!  

Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600± 25 μm, Orientation: 111

Technical Properties:  

Size (inch)


Thickness (μm)

 600± 25


 Iron (N type)


 Single Side







Growth method


OF Length


IF Length 



 1E7 Ohmcm

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
Indium phosphide (InP) has started to be developed at the beginning of 1980s.
Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct
bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP)
is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form.

Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors.

InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide.

  • Indium phosphide (InP) is used in modulators.
  • Indium phosphide (InP) is used in photo-detectors.
  • Indium phosphide (InP) is used in LEDs.
  • Indium phosphide (InP) is used in fiber communications components.
  • Indium phosphide (InP) is used in semiconductor optical amplifiers.
View AllClose