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Indium Phosphide (InP) Wafers

Size: 3'', Thickness: 600± 25 μm, Orientation: 100

Technical Properties:  

Fields of Application for Indium Phosphide (InP)

Indium phosphide (InP) is a binary semiconductor composed of indium and phosphorus.
Indium phosphide (InP) has started to be developed at the beginning of 1980s.
Indium phosphide (InP) which used in a high power and high frequency electronics, has superior electron velocity. Indium phosphide (InP) has a direct
bandgap by contrast with many semiconductors. This makes indium phosphide (InP) useful for optoelectronics and laser diodes. Indium phosphide (InP)
is a crucial material for production of laser signals, determination and conversion of those signals back to electronic form.

Indium Phopshide (InP) is a binary semiconductor composed of Indium (In) and Phosphorus (P), belonging to a group of materials commonly known as III-V Semiconductors.

InP is used in high power and high-frequency electronics and boasts a superior electron velocity in comparison to more common semiconductors such as Silicon and Gallium Arsenide.

Indium Phosphide has a face-centred cubic crystal structure almost identical to that of GaAs and most of the lll-V semiconductors.

InP wafers must be prepared prior to device fabrication, all III-V wafers must be lapped to remove surface damage that occurs during the slicing process. Wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage allowing for the attainment of super-flat mirror like surfaces with a remaining roughness on an atomic scale. The wafer is then ready for device fabrication.

• Indium phosphide (InP) is used in modulators.
• Indium phosphide (InP) is used in photo-detectors.
• Indium phosphide (InP) is used in LEDs.
• Indium phosphide (InP) is used in fiber communications components.
• Indium phosphide (InP) is used in semiconductor optical amplifiers.