Indium Arsenide (InAs) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

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Indium Arsenide (InAs) Wafers

Size: 3”, Thickness: 625± 25 μm , Orientation: 100

Technical Properties:  



Size (inch)


Thickness (μm)

 625± 25


 Single Side


 Zinc/Sulphur (Zn/S, N Type)







Growth method


OF Length


IF Length 


Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound.
Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material.
Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember 
emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source.

They can be supplied in n type, p type or semi insulating forms with different orientations.

Indium arsenide, InAs, is a semiconductor composed of indium and arsenic.

It has the appearance of grey cubic crystals with a melting point of 942 °C.

Indium arsenide is used for construction of infrared detectors, for the wavelength range of 1–3.8 µm.

The detectors are usually photovoltaic photodiodes.

Cryogenically cooled detectors have lower noise, but InAs detectors can be used in higher-power applications at room temperature as well.

Indium arsenide is also used for making of diode lasers.

  • Indium arsenide (InAs) wafer is used for infrared detectors.
  • Indium arsenide (InAs) wafer  is used for mil specs.
  • Indium arsenide (InAs) wafer  is used for foods.
  • Indium arsenide (InAs) wafer  is used for optical grades.
  • Diode lasers are also made using indium arsenide (InAs) wafer.
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