Indium Arsenide (InAs) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

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SKU:
NG09InAs0902
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Description

1 piece/840
5 pieces/3960                           

Please contact us for quotes on larger quantities !!!  

Indium Arsenide (InAs) Wafers

Size: 3”, Thickness: 625± 25 μm , Orientation: 100

Technical Properties:  

Quality

 EPI-Ready

Size (inch)

 3”

Thickness (μm)

 625± 25

Polished

 Single Side

Dopant

 Zinc/Sulphur (Zn/S, N Type)

Orientation

 100

Mobility

 6000-20000

EPD

 ≤50000

Growth method

 VGF

OF Length

 22±2

IF Length 

 11±1

Fields of Application for Indium Arsenide (InAs) Wafer

Indium arsenide (InAs) is a compound of indium and arsenic. Indium arsenide (InAs) is a semiconductor compound.
Indium arsenide (InAs) is similar to gallium arsenide and is a direct bandgap material.
Since indium arsenide (InAs) wafer has high electron mobility, narrow energy bandgap and is a strong Photo-dember 
emitter, indium arsenide (InAs) wafer is widely used as terahertz radiation source.

  • Indium arsenide (InAs) wafer is used for infrared detectors.
  • Indium arsenide (InAs) wafer  is used for mil specs.
  • Indium arsenide (InAs) wafer  is used for foods.
  • Indium arsenide (InAs) wafer  is used for optical grades.
  • Diode lasers are also made using indium arsenide (InAs) wafer.
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