Gallium Antimonide (GaSb) Wafers, Size: 3”, Thickness: 625± 25 μm, Orientation: 100, EPI-Ready

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NG09GaSb0905
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Description

1 piece/845 
5 pieces/3995                          

Please contact us for quotes on larger quantities !!!  

Gallium Antimonide (GaSb) Wafers

Size: 3”, Thickness: 625± 25 μm, Orientation: 100

Technical Properties:  

Quality

 EPI-Ready

Size (inch)

 3”

Thickness (μm)

 625± 25

Polished

 Single Side

Dopant

 Tellurium ( N type )

Orientation

 100

Mobility

 2000-3500

EPD

 ≤2000

Growth method

 VGF

OF Length

 22±2

IF Length 

 11±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt.
Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds.
Gallium antimonide (GaSb) is supplied in polished wafer form.

  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
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