Gallium Antimonide (GaSb) Wafers, Size: 2”, Thickness: 500± 25 μm, Orientation: 100, EPI-Ready

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NG09GaSb0901
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Description

1 piece/495 
5 pieces/2290                         

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Gallium Antimonide (GaSb) Wafers

Size: 2”, Thickness: 500± 25 μm, Orientation: 100

Technical Properties:  

Quality

 EPI-Ready

Size (inch)

 2”

Thickness (μm)

 500± 25

Polished

 Single Side

Dopant

 Tellurium (N type)

Orientation

 100

Mobility

 2000-3500

EPD

 ≤2000

Growth method

 VGF

OF Length

 16±2

IF Length 

 8±1

Fields of Application for Gallium Antimonide (GaSb)

The intermetallic compound of gallium antimonide (GaSb) was first prepared in 1926 by Victor Goldschmidt.
Gallium antimonide (GaSb) is a semiconductor made of gallium and antimony of the group III-V compounds.
Gallium antimonide (GaSb) is supplied in polished wafer form.

  • Gallium antimonide (GaSb) is used for infrared detectors.
  • Gallium antimonide (GaSb) is used for infrared LEDs.
  • Gallium antimonide (GaSb) is used for transistors.
  • Gallium antimonide (GaSb) is used for lasers.
  • Gallium antimonide (GaSb) is used for thermophotovoltaic systems.
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