Prime FZ-Si Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 2000 - 4000 (ohm.cm), 1-Side Polished, Thickness: 300 ± 10 μm

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SKU:
NG08SW0411
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Prime FZ-Si Wafer

Size: 4”, Orientation: (100), Boron Doped, 1-Side Polished, Thickness: 300 ± 10 μm 

Technical Properties: 

Quality

Prime

Materials

FZ-Si 

Size (inch)

4”

Orientation

(100)

Coating

 

Thickness (μm)

300 ± 10

Doping

Boron

Resistivity (ohm.cm)

2000 - 4000

Polished

One Side

Float zone is referred as a very pure silicon that is produced by vertical zone melting.

Compared to Czochralski method, crystals of FZ Silicon have higher purities.

Light impurities in FZ Si wafers provides a chance to control some of the defects and increase the mechanical strength.

Flat zone silicons have very high resistivity distribution so they are specially used in detectors.

There are some other properties that are needed to prevent detector noises.

Some of these properties are minority carrier lifetime and bulk generation current.

However, these two properties weigh less than the crstalline structure and purity of the wafer.

Additionally multiple zone refining can be performed on a rod to further reduce the impurity concentrations.

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