Gallium Arsenide (GaAs) Wafer, Size: 4”, Double Side Polished, Thickness: 300± 25 μm, EPI-ready

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NG09SW0901
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Description

1 piece/198
5 pieces/935                        
25 pieces/3980

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Gallium Arsenide (GaAs) Wafer

Size: 4”, Double Side Polished, Thickness: 300± 25 μm, EPI-ready 

Technical Properties:

Quality

 GaAs

Materials

 GaAs

Size (inch)

 4”

Thickness (μm)

 300± 25

Polished

 Double Side

Dopant

 Undoped

Orientation

 100

Resistivity 

 1 E8

Mobility

 4500

EPD

 ≤5000

Growth method

 VGF

OF Length

 32.5±1

IF Length

 18±1

Applications:

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic.

Gallium arsenide (GaAs) is a semiconductor compound. Gallium arsenide (GaAs)  has a high electron velocity and
high saturated electron mobility. This makes gallium arsenide (GaAs) components are useful in fast electronic
switching applications and at ultra-high radio frequencies.

In 1907, the British discovered infrared emmission from gallium arsenide. This was called electroluminescence.
Also, gallium arsenide (GaAs) was used as a solar cells in space for the Venera 3 mission in 1965, which is the first
known operational use of gallium arsenide (GaAs).

  • Gallium arsenide (GaAs) is used in laser diodes.
  • Gallium arsenide (GaAs) is used in solar cells.
  • Gallium arsenide (GaAs) is used in optical windows.
  • Gallium arsenide (GaAs) is used in monolithic microwave integrated circuits.
  • Gallium arsenide (GaAs) is used in microwave frequency integrated circuits.
  • Gallium arsenide (GaAs) is used in infrared light-emitting diodes.
  • Gallium arsenide (GaAs) is useful in barometers.
  • Gallium arsenide (GaAs) is useful in pharmaceuticals and nuclear medicine tests.
  • Gallium arsenide (GaAs) is useful in high temperature thermometers.
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