Bismuth Ferrite (BiFeO3) Sputtering Targets, indium, Purity: 99.9%, Size: 1'', Thickness: 0.125''
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1 piece/850 €
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Bismuth Ferrite (BiFeO3) Sputtering Targets, indium
Purity: 99.9%, Size: 1'', Thickness: 0.125''
Sputtering is a proven technology capable of depositing thin films from a wide variety of materials on to diverse substrate shapes and sizes.
The process with sputter targets is repeatable and can be scaled up from small research and development projects. The proses with sputter
targets can be adapted to the production batches involving medium to large substrate areas. The chemical reaction can occur on the target
surface, in-flight or on the substrate depending on the process parameters. The many parameters make sputter deposition a complex process
but allow experts a large degree of control over the growth and microstructure of the area.
Applications of Sputtering Targets;
- Sputtering targets is used for film deposition. The deposition made by sputter targets is a method of depositing thin films by sputtering
that involves eroding material from a "target" source onto a "substrate" such as a silicon wafer.
- Semiconductor sputtering targets is used to etch the target. Sputter etching is chosen in cases where a high degree of etching anisotropy
is needed and selectivity is not a concern.
- Sputter targets is also used for analysis by etching away the target material.
One of the example occurs in secondary ion spectroscopy (SIMS), where the target sample is sputtered at a constant rate. As the target is sputtered,
the concentration and identity of sputtered atoms are measured using mass spectrometry. By helping of the sputtering target, the composition of the
target material can be determined and even extremely low concentrations of impurities are detected.
Sputtering target has also application area in space. Sputtering is one of the forms of space weathering, a process that changes the physical and
chemical properties of airless bodies, such as asteroids and the Moon.
Bismuth ferrite with the chemical formula of BiFeO3, is an inorganic chemical compound with perovskite structure and one of the most promising
multiferroic materials. A bismuth ferrite sputtering target is usually made by high temperature sinttering/recrystallization the mixture of the oxide
coumpound of Bi and Fe, to obtain an one phase material Bismuth Ferrite (BiFeO3). Indium bonding is recommended for bismuth ferrite sputtering
Bismuth ferrit is a Pb-free ferroelectric (FE) material widely known for its excellent ferroelectric properties, such as large remnant polarization, high
Curie temperature, and high antiferromagnetic Neel temperature. It is perhaps the only material that possesses magnetic and FE properties at and
above room temperature. Recently, polarization-induced photovoltaic properties in bismuth ferrite have received increased attention owing to its
extremely large remnant polarization and a direct energy band gap (3.3 eV). Well-prepared bismuth ferrite films are more suitable than most
ferroelectric materials for studying the ferroelectric photovoltaic effect.