Prime Si+Si3N4 Wafer, Size: 4”, Orientaion: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 1000 nm
- SKU:
- NG08SW0704
Description
1 piece/110 €
5 pieces/504 €
25 pieces/2370 €
Please contact us for quotes on larger quantities !!!
Prime Si+Si3N4 Wafer
Size: 4”, Orientaion: (100), Boron Doped, Thickness: 380± 15 μm, Coating 1000 nm
Technical Properties:
|
Quality |
Prime |
|
Materials |
Si+Si3N4 |
|
Size (inch) |
4” |
|
Orientation |
(100) |
|
Coating |
1000 nm |
|
Thickness (μm) |
380± 15 |
|
Doping |
Boron |
|
Resistivity (ohm.cm) |
1-10 |
|
Polished |
Double Side |
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability.
It is commonly used for hard masks, as a dielectric material, or as a passivation layer.
Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance.
Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance.
Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
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Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Boron Doped, Resistivity: 1-10 (ohm.cm), 2 Side Polished, Thickness: 380± 15 μm, Coating 150 nm
Prime Si+SiO2 Wafer (dry), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 100 nm
Prime Si+SiO2 Wafer (wet), Size: 3”, Orientation: (100), Boron Doped, Resistivity: 1 -10 (ohm.cm), 1-Side Polished, Thickness: 380 ± 25 μm, Coating 300 nm
Prime Si+SiO2 Wafer (dry), Size: 6”, Orientation: (100), Boron Doped, Resistivity: 1 - 10 (ohm.cm), 2-Side Polished, Thickness: 675 ± 15 μm, Coating 200 nm
