Prime Si+Si3N4 Wafer, Size: 4”, Orientation: (100), Arsenic Doped, Resistivity: 0,001-0,005 (ohm.cm), 1 Side Polished, Thickness: 525± 25 μm, Coating 450 nm
- SKU:
- NG08SW0707
Description
1 piece/83 €
5 pieces/372 €
25 pieces/1740 €
Please contact us for quotes on larger quantities !!!
Prime Si+Si3N4 Wafer
Size: 4”, Orientation: (100), Arsenic Doped, Thickness: 525± 25 μm
Technical Properties:
|
Quality |
Prime |
|
Materials |
Si+Si3N4 |
|
Size (inch) |
4” |
|
Orientation |
(100) |
|
Coating |
450 nm |
|
Thickness (μm) |
525± 25 |
|
Doping |
Arsenic |
|
Resistivity (ohm.cm) |
0,001-0,005 |
|
Polished |
One Side |
Silicon nitride (Si3N4,SiN) offers excellent mechanical and thermal stability.
It is commonly used for hard masks, as a dielectric material, or as a passivation layer.
Silicon nitride is very hard by nature and has good thermal shock resistance and oxidation resistance.
Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance.
Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance.
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