Silicon Carbide Wafer (SiC-4H) - 4H, Size: 3'', Thickness: 350 μm, Research Grade, 4H Area: 95%

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NG09SIC40908
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Silicon Carbide Wafer (SiC-4H) - 4H

Size: 3'', Thickness: 350 μm, 4H Area: 95% 

Technical Properties:  

Quality

 Research Grade

Size (inch)

 3”

Thickness (μm)

 350

Ra

 ≤0.3

4H area

 95%

Orientation

 4°±0.5°

Resistivity 

 0.015-0.03

TTV

 ≤15

Bow

 ≤10

Warp

 ≤35

OF Length

 22.0±2.0

IF Length

 11.0±1.5

Fields of Application for Silicon Carbide (SiC-4H)- 4H Wafer

Silicon carbide (SiC) is a rare compound of silicon and carbon which is synthetically produced.

Silicon carbide (SiC) wafer has great electrical properties and excellent thermal properties. Silicon carbide (SiC) wafer has low thermal expansion. 
Silicon carbide (SiC) wafer has superior hardness properties. Silicon carbide (SiC) wafer performs well at high temperatures. Also, silicon carbide (SiC)
wafer has high resistance to corrosion, erosion and oxidation. In addition to, silicon carbide (SiC) wafer is also more shiny than either diamonds or
cubic zirconia.

While Silicon carbide (SiC-4H) - 4H wafer has superior electronic properties, silicon carbide (SiC-6H) – 6H wafer is most easily prepared and best studied.

  • Silicon carbide (SiC) wafer is used for hybrid and electric vehicles.
  • Silicon carbide (SiC) wafer is used for green energy generation.
  • Silicon carbide (SiC) wafer is used for LEDs.
  • Silicon carbide (SiC) wafer is used for many other emerging markets.

 

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