Description
1 piece/ 269 €
5 pieces/ 1094 €
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Monolayer Graphene on SiO2/Si Substrate Size: 2"
Technical Properties of Graphene Film
Transparency |
> 95 % |
Coverage |
> 93% |
Thickness (theoretical) |
0.340 nm |
Sheet Resistance |
500-530 Ohms/sq |
Grain size |
6-10 μm |
Technical Properties of SiO2/Si Substrate
Size (inch) |
2'' |
Dry Oxide Thickness |
300 nm |
Type |
Phosphor doped/N type |
Orientation |
<100> |
Resistivity |
0.001 - 0.01 |
Thickness |
525 +/- 20 μm |
Front surface |
One Side Polished |
SEM Image of Monolayer Graphene
Raman Spectrum Image Of Monolayer Graphene
Method of Preparation Graphene on Si/SiO2 Substrate was prepared by the following steps:
1) Singlelayer graphene grown on copper foil |
2) Deposit PMMA and curing process |
3) Remove Cu by etching process |
4) Wash PMMA/Graphene in DI water |
5) Redeposit PMMA/Graphene onto Si substrate and curing process |
6) Remove PMMA with aceton |
Applications
- Graphene research
- Supercapacitors
- Catalyst
- Solar energy
- Graphene optoelectronics, plasmonics and nanophotonics
- Graphene semiconductor chips
- Conductive graphene film
- Graphene computer memory
- Biomaterials and Bioelectronics